为何在有源晶振Vdd脚与GND脚之间增加一个旁路电容？晶诺威科技在有源晶振DATA BASE中，解释如下：

To ensure optimal oscillator performance, place a by-pass capacitor of 0.1uF as close to the part as possible between Vdd and GND pads.

为了确保振荡器性能，请增加一颗0.1 uF 旁路电容，并将其尽可能靠近 Vdd 和 GND 焊盘之间的部分。0.1 uF 旁路电容的作用是降低来自电源杂波对晶体振荡器的负面影响。

All bypass capacitors should be placed as close as possible to the pins and should have a low-resistance and low-inductance connection to ground to achieve the best performance.

所有旁路电容应尽可能靠近引脚，并应具有低电阻和低电感接地连接，以实现性能。换而言之，旁路电容应尽可能安装在靠近石英晶体振荡器电源的地方。布线距离越长寄生电感越大，高频侧的阻抗随之变大。布线应先连接旁路电容器后连接到电源线。这样，噪音必将通过旁路电容，从而提高噪音去除效果。